Physical properties
Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB
Physical form
cubic (a = 5.6533 Ã…)
Molecular Weight: 144.64. Empirical Formula: AsGa. linearFormula: GaAs. Quality Level: 100. form: (single crystal substrate). resistivity: ≥. 1E7 . Ω. -cm. diam. × thickness: 2 . in. × 0.5 . mm . density: 5.31 . g/mL . at 25 . °C (lit.). semiconductor properties: <. 100>. . SMILES string: [Ga]#[As]. InChI: 1S/As.Ga. InChI key: JBRZTFJDHDCESZ-UHFFFAOYSA-N. Pictograms: GHS08. Signal Word: Danger. Hazard Statements: H350 - H360F - H372. Precautionary Statements: P202 - P260 - P264 - P280 - P308 + P313 - P405. Hazard Classifications: Carc. 1B - Repr. 1B - STOT RE 1. Storage Class Code: 6.1A - Combustible, acute toxic Cat. 1 and 2 / very toxic hazardous materials. WGK: WGK 3. Flash Point(F): Not applicable. Flash Point(C): Not applicable.- UPC:
- 12141715
- Condition:
- New
- HazmatClass:
- Yes
- MPN:
- 651486-1EA
- CAS:
- 1303-00-0
- Temperature Control Device:
- Yes
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