Physical properties
Thermal expansion: 5.3 x 10-6/°C
Undoped (N-type semiconductor), carrier concentration = 2-6 × 1016 cm-3, EPD < 3 × 105 cm-2, growth technique = LEC
Physical form
cubic (a = 5.4505Ã…)
Molecular Weight: 100.70. Empirical Formula: GaP. linearFormula: GaP. Quality Level: 100. form: (single crystal substrate). resistivity: ~0.3 . Ω. -cm. diam. × thickness: 2 . in. × 0.5 . mm . mp: 1480 . °C. density: 4.13 . g/mL . at 25 . °C. semiconductor properties: <. 111>. . SMILES string: [P]#[Ga]. InChI: 1S/Ga.P. InChI key: HZXMRANICFIONG-UHFFFAOYSA-N. Pictograms: GHS07. Signal Word: Warning. Hazard Statements: H319 - H335. Precautionary Statements: P261 - P264 - P271 - P280 - P304 + P340 + P312 - P305 + P351 + P338. Hazard Classifications: Eye Irrit. 2 - STOT SE 3. Target Organs: Respiratory system. Storage Class Code: 11 - Combustible Solids. WGK: WGK 2. Flash Point(F): Not applicable. Flash Point(C): Not applicable. Personal Protective Equipment: dust mask type N95 (US), Eyeshields, Gloves.- UPC:
- 12141715
- Condition:
- New
- HazmatClass:
- No
- MPN:
- 651494-1EA
- CAS:
- 12063-98-8
akash.verma@cenmed.com
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