DISILANE 99.998% ELECTRONIC GRADE

General description

Atomic number of base material: 14 Silicon

Application

Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.

Features and Benefits

Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD). Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium. Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.

Molecular Weight: 62.22. Empirical Formula: H₆Si₂. linearFormula: Si₂H₆. grade: electronic grade. Quality Level: 100. Assay: ≥. 99.998% chemical purity basis. form: gas. impurities: ≤. 50 . ppm Higher silanes, <. 0.2 . ppm Chlorosilanes, <. 1 . ppm Argon (Ar) + Oxygen (O₂), <. 1 . ppm Carbon dioxide (CO₂), <. 1 . ppm Nitrogen (N₂), <. 1 . ppm THC, <. 1 . ppm Water, <. 5 . ppm Siloxanes. bp: −. 14.5 . °C (lit.). mp: −. 132.6 . °C (lit.). transition temp: critical temperature 150.9 . °C. SMILES string: [SiH3][SiH3]. InChI: 1S/H6Si2/c1-2/h1-2H3. InChI key: PZPGRFITIJYNEJ-UHFFFAOYSA-N. Pictograms: GHS02,GHS04,GHS07,GHS08. Signal Word: Danger. Hazard Statements: H221 - H280 - H312 - H315 - H319 - H334 - H335. Precautionary Statements: P210 - P280 - P302 + P352 + P312 - P305 + P351 + P338 - P403 + P233 - P410 + P403. Hazard Classifications: Acute Tox. 4 Dermal - Eye Irrit. 2 - Flam. Gas 1B - Press. Gas Liquefied gas - Resp. Sens. 1 - Skin Irrit. 2 - STOT SE 3. Target Organs: Respiratory system. Storage Class Code: 2A - Gases. WGK: WGK 3. Flash Point(F): 50.0 °F - closed cup. Flash Point(C): < 10 °C - closed cup. Personal Protective Equipment: Eyeshields, Faceshields, Gloves, multi-purpose combination respirator cartridge (US).