ALUMINUM OXIDE SINGLE CRYSTAL SUBSTRATE (0001) 99.99% METALS BASIS (C005B-015633)

Features and Benefits

Common substrate for III-V nitrides as well as many other epitaxial films.

Physical properties

thermal expansion = 7.5 × 10^-6 /°C; specific heat = 0.10 cal/°C; thermal conductivity = 46.06 @ 0 °C, 25.12 @ 100 °C, 12.56 @ 400 °C (W/m,K); dielectric constant = ~9.4 @ 300 K at A axis, ~11.58 @ C axis; loss tangent at 10 GHz < 2 × 10^-5 at A axis, 5 × 10^-6 at C axis

Physical form

Crystalline, hexagonal (a = 4.758 Ã…, c = 12.992)

Molecular Weight: 101.96. Empirical Formula: Al₂O₃. linearFormula: Al₂O₃. description: Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom), Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom), Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom), Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom), Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom), Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom), single side polished. Quality Level: 100. form: single crystal substrate. hardness: 9 . mohs. L × W × thickness: 10 . mm × 10 . mm × 0.5 . mm . mp: 2040 . °C (lit.). semiconductor properties: <. 0001>. . SMILES string: O: [Al]O[Al]: O. InChI: 1S/2Al.3O. InChI key: TWNQGVIAIRXVLR-UHFFFAOYSA-N. Storage Class Code: 13 - Non Combustible Solids. WGK: nwg. Flash Point(F): Not applicable. Flash Point(C): Not applicable. Personal Protective Equipment: Eyeshields, Gloves, type N95 (US).